SELF-ALIGNED THIN FILM TRANSISTORS IN AN ACTIVE MATRIX ARRAY

摘要

A method of providing a transistor as for use in an array includes using the gate structure as a mask, allowing phosphorus ion implantation of portions of an a-Si:H layer or by providing additional phosphorus-doped silicon portions for ohmic contacts to transistor source and drain. The crossovers of the source and gate connection lines are insulated by a-Si:H/SiNx layers or by insulating with a layer of a polyimide during the processing sequence. Redundancy of both transistor and crossover increase yield in an array.