| 摘要 |
PURPOSE:To perform a fine processing on the surface of a silicon substrate without using a resist. CONSTITUTION:An active layer is formed on the surface of a silicon substrate 101 using hydrogen sulfide plasma 104 (B). Then, after UV light 106 of 248nm is emitted via a mask to form a latent image layer 105 in the active layer (C), the active layer other than the latent image layer is removed with NF3+O2 plasma 107a (D). After that, the exposed surface of the Si substrate is etched with Cl2+NF3 plasma using the left layer 105 as a mask (E).
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