| 摘要 |
PURPOSE:To stably control the height of a barrier over a wide range by providing a thin film having a thickness capable of generating a quantum-mechanical tunnel effect between first and second electrode layers formed on the main surface of a semiconductor region. CONSTITUTION:A barrier electrode 8 is formed in combination of both a Ti thin layer 4a as a first electrode layer formed substantially at a center on the upper surface of an n-type region 3 of a semiconductor substrate 1 and an Al layer 5a as a second electrode layer formed on the upper surface of the layer 4a. And, oxygen molecules, etc., are absorbed to the upper surface of the layer 4a thereby to form as a thin film an extremely thin absorption layer having a thickness capable of generating a quantum-mechanical tunnel effect between the layers 4a and 5a. The height of a Schottky barrier can be stabilized relatively at a low or high level according to the content of oxide included in the thin film and the thickness of the layer 4a. |
