发明名称 Process for forming metal deposited film containing aluminum as main component by use of alkyl hydride
摘要 A process for forming a Si-containing Al film of good quality according to the CVD method utilizing an alkyl aluminum hydride, a gas containing silicon and hydrogen, which is an excellent deposited film formation process also capable of selective deposition of Si-containing Al.
申请公布号 US5196372(A) 申请公布日期 1993.03.23
申请号 US19920899162 申请日期 1992.06.15
申请人 CANON KABUSHIKI KAISHA 发明人 MIKOSHIBA, NOBUO;TSUBOUCHI, KAZUO;MASU, KAZUYA
分类号 C23C16/42;H01L21/285;H01L21/3205 主分类号 C23C16/42
代理机构 代理人
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