发明名称 |
Process for forming metal deposited film containing aluminum as main component by use of alkyl hydride |
摘要 |
A process for forming a Si-containing Al film of good quality according to the CVD method utilizing an alkyl aluminum hydride, a gas containing silicon and hydrogen, which is an excellent deposited film formation process also capable of selective deposition of Si-containing Al.
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申请公布号 |
US5196372(A) |
申请公布日期 |
1993.03.23 |
申请号 |
US19920899162 |
申请日期 |
1992.06.15 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
MIKOSHIBA, NOBUO;TSUBOUCHI, KAZUO;MASU, KAZUYA |
分类号 |
C23C16/42;H01L21/285;H01L21/3205 |
主分类号 |
C23C16/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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