| 摘要 |
PURPOSE:To prevent scratching and pattern defects of the mask surface by forming a diamond film on the mask surface. CONSTITUTION:A diamond film having 0.1 to 1mum thickness is formed by plasma CVD method on a surface including at least a surface of an X-ray mask. The X-ray mask consists of a membrane film comprising a silicon film, silicon carbide film, silicon oxide film, silicon nitride film, diamond film, etc., pn which a pattern is formed comprising 0.01-1mum thick tungsten film, gold film or tantalum film. Thus, a diamond film is formed on the mask surface. Thereby, scratching and pattern defects of the surface of a patterned mask used for exposure or X-ray exposure for the production of ICs can be prevented. |
