发明名称 Static memory containing sense AMP and sense AMP switching circuit
摘要 A static memory cell is connected with word lines and data lines. First and second switches are connected in series between a data line and an output circuit. A sense amplifier has an input/output terminal connected to a common connection point of the said first and second switches. The first switch is turned off in synchronism with commencing operation of the sense amplifier such that the parasitic capacitance of the data line as viewed from the sense amplifier decreases. The second switching means is turned on a predetermined time later in order to transmit the output signal of the sense amplifier to the output circuit.
申请公布号 US5193075(A) 申请公布日期 1993.03.09
申请号 US19900490745 申请日期 1990.03.08
申请人 HITACHI LTD.;HITACHI VLSI ENGINEERING CORP. 发明人 HATANO, SUSUMU;OISHI, KANJI;KIKUCHI, TAKASHI;SAIGOU, YASUHIKO;FUKUTA, HIROSHI;UCHIYAMA, KUNIO;AOKI, HIROKAZU;NISHII, OSAMU
分类号 G11C11/419;G06F12/08;G11C7/06;G11C11/40;G11C11/41;H01L27/10 主分类号 G11C11/419
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