| 摘要 |
Masked read-only memory in a semiconductor memory device comprising: a diffusion region (23) extending in a first direction and separated from another diffusion region (23) by an insulation region (21); a word line (25) extending in a second direction perpendicular to the first direction and parallel to another word line (25); and a bit line (31, 33) extending in the first direction, in a region formed on an arrangement of word lines (25) and corresponding to the insulation region (21) and coming into contact with the word line (25) by way of a contact region (27, 29). Thus, since the bit line is separated from the diffusion region (23) by a given gap, the turnaround time (TAT) is reduced. <IMAGE>
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