| 摘要 |
<p>PURPOSE:To relieve the accuracy of the registration of the thin-film transistor element array to be used as a driving device for a liquid crystal flat display by forming silicide accumulation capacity electrodes on gate wirings in a self- matching manner. CONSTITUTION:The silicide formed on an amorphous silicon film is patterned by rear surface exposing using the gate wirings 10 as a mask to form the accumulation capacity electrodes 17 in the self-matching manner with the gate wirings. Not so much strict registration for preventing the shorting with adjacent picture element electrodes 18 is, therefore, eliminated. Since the gate wiring width is used as the accumulation capacity electrode as it is, the area as a capacity can be assured.</p> |
