| 摘要 |
<p>PURPOSE:To provide a substrate heater/for use in a molecular beam epitaxy system, capable of heating a substrate to an even temperature and suppressing rise in the temperature of a heater for heating purposes, namely, requiring little power. CONSTITUTION:Disposed between a substrate 1 and a heater 4 is a radiation shielding member having a hole, a diameter of which is smaller than the diameter of the substrate 1 or smaller than the diameter of an opening formed in a susceptar 2. The center portion (the majority) of the substrate 1 is efficiently heated by a direct heat from the heater 4 through the hole in the radiation shielding member, whilst an excessive heat rise in the periphery of the substrate supported by the susceptor 2 is prevented by the radiation shielding member which suppresses the quantity of the heat from the heater 4. Therefore, it is possible to render the heat distribution of the substrate 1 even and the temperature of the heater 4 low, whereby it is possible to reduce defects on the surface of the substrate 1 arising during the epitaxial growth, and improve the reliability of a substrate heater mechanism section including a substrate rotating mechanism.</p> |
