发明名称 SEMICONDUCTOR MEMORY
摘要 PURPOSE:To provide the semiconductor storage device which eliminates the increase of an execution time generated by a conversion from redundant binary number data to general binary number data, and can execute an arithmetic processing at a high speed. CONSTITUTION:This semiconductor memory includes plural memory circuits 10, and each of the memory circuits 10 includes a data bit memory cell 11, a sine bit memory cell 12, a converting circuit 13 and a selecting circuit 14. The data bit memory cell 11 stores one bit of regular binary number data or a data bit of one digit of redundant binary number data. The sine bit memory cell 12 stores a sine bit of one digit of the redundant binary number data. The converting circuit 13 converts the redundant binary number data to the general binary number data, based on the data bit stored in the data bit memory cell and the sine bit stored in the sine bit memory cell 12. The selecting circuit 14 selects the data bit stored in the data bit memory cell 11 or one bit of the general binary number data outputted by the converting circuit 13.
申请公布号 JPH0546361(A) 申请公布日期 1993.02.26
申请号 JP19920008618 申请日期 1992.01.21
申请人 MITSUBISHI ELECTRIC CORP 发明人 MACHIDA HIROHISA
分类号 G06F7/38;G06F7/50;G06F7/503;G06F7/506;G06F15/78;G06F17/10;G11C7/10;H03M7/02 主分类号 G06F7/38
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