| 摘要 |
PURPOSE:To diffuse impurities uniformly to each wafer inside a lateral diffusion furnace without lowering the processing efficiency of a diffusion process. CONSTITUTION:This device has a temperature gradient such as that the temperature at a center heater region goes higher as it goes from the rear side to the front side by setting the temperature of a front heater 2 higher than the set temperature of the center heater 3 and setting the temperature of a rear heater 4 lower than it, whereby this accelerates the diffusion of impurities. Hereby, the drop of the quantity of the diffused impurities, due to the impurity concentration in introduced gas falling as it goes from the rear side to front side, is complemented and uniform diffusion is performed to each wafer W inside a reactor core tube 1.
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