| 摘要 |
An integrated-distributed-resistive-capacitive network (100) having a high dielectric electronically-tunable semiconductor integrated capacitor. The network (100) also includes a resistive layer (126) formed on the high dielectric semiconductor integrated capacitor, to provide the distributed resistance of the network (100). External contact to the resistive portion of the network (100) is provided via a plurality of contact terminals (122A and 122B) which are coupled to the resistive layer (126).
|
