| 摘要 |
PURPOSE:To obtain a detection method for loose contact of a bonding wire of a semiconductor device, wherein, even in the case that a semiconductor chip and the bonding wire are coated with resin, detection is possible, loose contact can surely detected, if loose contact exists, even when the detection is executed by using a forward voltage, and the detection is easy. CONSTITUTION:The title method uses the fluctuation of resistance component in current-voltage characteristics. In the case of a transistor semiconductor device, two points of detection current values IF1 and IF2 are detemined. In the difference of each VF(E-F), decision reference is set, and the defective contact of a bonding wire is detected. Since the monitor of VF(E-B) is used, it does not happen that detection is impossible on account of resin coating. Since two points of detection current values are set, detection is surely possible in the case of loose contact. Since automatic measurement is possible on account of specification setting, decision is easily enabled in a short period. |
