发明名称 |
PROCESS FOR THE CONTROLLED GROWTH OF SINGLE-CRYSTAL FILMS OF SILICON CARBIDE POLYTYPES ON SILICON CARBIDE WAFERS |
摘要 |
This invention is a method for the controlled growth of single-crystal semiconductor-device-quality films of SiC polytypes on vicinal (0001) SiC wafers with low tilt angles. Both homoepitaxial and heteroepitaxial SiC films can be produced on the same wafer. In particular, 3C-SiC and 6H-SiC films can be produced within selected areas of the same 6H-SiC wafer. |
申请公布号 |
WO9222922(A3) |
申请公布日期 |
1993.02.18 |
申请号 |
WO1992US05031 |
申请日期 |
1992.06.12 |
申请人 |
CASE WESTERN RESERVE UNIVERSITY |
发明人 |
POWELL, J., ANTHONY;LARKIN, DAVID, J. |
分类号 |
H01L21/36;H01L21/365 |
主分类号 |
H01L21/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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