| 摘要 |
<p>A method of manufacturing a semiconductor device includes the steps of: depositing a semiconductor film (4) onto a semiconductor substrate (1), the semiconductor film having a main component which is the same material as the semiconductor substrate; and forming a first insulating layer (5) on the semiconductor substrate. This method also includes the steps of: removing predetermined areas from the first insulating layer and the semiconductor film so as to form an opening; forming a second insulating layer (6) inside the opening and on the first insulating layer; and removing the second insulating layer by anisotropic etching so that the side wall (6a) of the opening remains. <IMAGE></p> |
