发明名称 |
Method for etching single-crystal semiconductor selective to amorphous/polycrystalline semiconductor and structure formed by same |
摘要 |
A method of forming a vertical DRAM device. A lower trench is filled with polycrystalline or amorphous semiconductor for a capacitor. An upper trench portion has exposed sidewalls of single-crystal semiconductor. The method then includes etching the single-crystal semiconductor sidewalls to widen the upper trench portion beyond the exposed upper surface of the semiconductor fill of the capacitor to form exposed regions of single-crystal semiconductor on a bottom portion of the upper trench adjacent to the exposed upper surface of the semiconductor fill. A trench top insulating layer is deposited on the bottom portion of the upper trench, over the upper surface of the semiconductor fill and over the adjacent regions of single-crystal semiconductor. The method then includes forming a vertical gate dielectric layer, wherein the trench top insulating layer extends below the vertical gate insulating layer.
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申请公布号 |
US7563670(B2) |
申请公布日期 |
2009.07.21 |
申请号 |
US20060558974 |
申请日期 |
2006.11.13 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGUO;HENRY RICHARD O.;SETTLEMYER, JR. KENNETH T. |
分类号 |
H01L21/8242;H01L21/20;H01L21/336 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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