| 摘要 |
<p>PURPOSE:To improve the boosting speed of a boosting circuit without changing a coupling ratio between the voltage level of the power source of a system or a capacity constituting the boosting circuit, and a transistor, or without changing a clock signal frequency. CONSTITUTION:Plural N channel MOS transistors TR are serially connected, the gate of each transistor is connected with the drain of the pertinent transistor TR, power source Vcc is supplied to the drain of one edge transistor TR so that each transistor TR can be always turned to ON state, and one terminal of a capacity C is connected with the source of each transistor TR. Then, a low potential voltage Vss and a high potential voltage Vp are alternately supplied to the other terminal of each adjacent capacity C based on a clock signal CLK, and a boosted output signal Vpp is outputted from the source of the other edge transistor TR. The above mentioned high potential voltage Vp is generated by boosting the power source Vcc by a boosting means 15.</p> |
