| 摘要 |
PURPOSE:To accomplish a highly integrated semiconductor device by a method wherein a high melting point metal is selectively grown on the insulating film, formed on the surface of a semiconductor substrate, whereon impurities are partially introduced, thereby enabling to selectively leave a high melting point metal on an element isolation region. CONSTITUTION:After an insulating film 9 to be used for element isolation has been formed on a semiconductor substrate 1, a gate insulating film 2 and a gate electrode 3 are formed, and a source 4 and a drain 5 are formed. Subsequently, the region excluding the surface of the semiconductor substrate including a part of the insulating film 9 for element isolation is covered by the material 10 which will be turned to the mask to be used for introduction of impurities, and impurities are selectively introduced into the above-mentioned region. Then, a mask material 10 is removed, and when a high melting point metal is grown in a vapor-phase, high melting point metals 11, 12 and 13 are selectively formed on the impurity-introduced insulating material, source 4, drain 5 and gate 3. As a result, an inner wiring can be performed in the semiconductor device when the high melting point metal is formed, and the aperture part of an electrode lead-out part can be extended as far as to the point located above the element isolation region. |
