发明名称 |
THERMAL-SHUT-DOWN CIRCUIT FOR IC PROTECTION |
摘要 |
a voltage source and resistors (R1,R2) , which are connected in series to the voltage source, distributing the voltage; a constant-current source and a transistor (Q1) to be turned-on according to the electric potential distributed by resistors; a transistor (Q2) operating inversely to the transistor (Q1); a NPN transistor (Q3) operating inversely to the transistor (Q2); a diode and a resistor (D1,R4) for stabilizing the bias of the circuit connected to the exterial terminal; a resistor (R3) controlling the turn-off temperature point of transistor (Q1).
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申请公布号 |
KR930000600(B1) |
申请公布日期 |
1993.01.25 |
申请号 |
KR19890018935 |
申请日期 |
1989.12.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JANG, JI - HUN;KIM, DONG - YOL;LEE, CHOL - HO |
分类号 |
H01L21/00;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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