发明名称 THERMAL-SHUT-DOWN CIRCUIT FOR IC PROTECTION
摘要 a voltage source and resistors (R1,R2) , which are connected in series to the voltage source, distributing the voltage; a constant-current source and a transistor (Q1) to be turned-on according to the electric potential distributed by resistors; a transistor (Q2) operating inversely to the transistor (Q1); a NPN transistor (Q3) operating inversely to the transistor (Q2); a diode and a resistor (D1,R4) for stabilizing the bias of the circuit connected to the exterial terminal; a resistor (R3) controlling the turn-off temperature point of transistor (Q1).
申请公布号 KR930000600(B1) 申请公布日期 1993.01.25
申请号 KR19890018935 申请日期 1989.12.19
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JANG, JI - HUN;KIM, DONG - YOL;LEE, CHOL - HO
分类号 H01L21/00;(IPC1-7):H01L21/00 主分类号 H01L21/00
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