| 摘要 |
PURPOSE: To minimize base/collector capacity by forming a sub-collector as a limited region, including the region of emitter and a region set for collector terminal before growing a collector layer, a base layer and an emitter layer. CONSTITUTION: After a sub-collector layer 2 is deposited on a substrate 1, the sub-collector is covered with a mask 10, oxygen injection 15 is performed and an insulated area 11 is formed on the sub-collector region 2. Next, the mask 10 is removed, a collector layer 3, a base layer 4, an emitter layer 5 and a covering layer 6 are epitaxillay grown on the sub-collector layer 2. In order to adjust the emitter on the sub-collector 12, a mask 13 is used and it is performed by etching. Next, the covering layer 6 and the emitter layer 5 are partially removed by etching and connected to the base. Thus, a bipolar transistor, having the minimum base/collector capacity can be manufactured easily.
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