| 摘要 |
<p>A rapid switching rotating disk reactor (25) has an elongated injector (16) for injecting an inert gas into the chamber (10) of a rotating disk reactor (25). The nozzle of the injector (7) is proximate to the center of the rotating wafer (12) for the purpose of providing an inert gas flow to produce an inert gas boundary layer above the wafer (12). Whenever the environment of the chamber is to be changed by an introduction of another fluid medium, the injector (16) is activated to provide an inert boundary layer attop the semiconductor wafer, wherein any processing caused by the reactive gases in the chamber (10) is prevented from occurring. Once the chamber (10) is filled with the subsequent fluid medium, the injector (16) is turned off in order for the next processing to commence.</p> |
