发明名称 |
METHOD FOR THE EPITAXIAL GROWTH OF A SEMICONDUCTOR STRUCTURE |
摘要 |
A method, and devices produced therewith, for the epitaxial growth of sub-micron semiconductor structures with at least one crystal plane dependently grown, buried active layer (24) consisting of a III-V compound. The active layer (24) and adjacent embedding layers (23, 25) form a heterostructure produced in a one-step growth process not requiring removal of the sample from the growth chamber inbetween layer depositions. The layers of the structure are grown on a semiconductor substrate (21) having a structured surface exposing regions of different crystal orientation providing growth- and no-growth-planes for the selective growth process. The method allows the production of multiple, closely spaced active layers and of layers consisting of adjoining sections having different physical properties. |
申请公布号 |
CA2006266(C) |
申请公布日期 |
1993.01.12 |
申请号 |
CA19892006266 |
申请日期 |
1989.12.20 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GALEUCHET, YVAN;GRAF, VOLKER;HEUBERGER, WILHELM;ROENTGEN, PETER |
分类号 |
H01L29/201;C30B29/40;H01L21/20;H01L21/205;H01L21/338;H01L29/775;H01L29/812;H01S5/12;H01S5/223;H01S5/227;H01S5/30;H01S5/32;H01S5/323;H01S5/34;H01S5/40;(IPC1-7):H01L21/20;H01L21/36 |
主分类号 |
H01L29/201 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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