| 摘要 |
<p>PURPOSE:To form a thin film resistor having uniform resistance-temperature coefficient irrespective of the material of an electrode and the configuration of the resistor by conducting an oxidizing operation in a low-pressure oxygen atmosphere when a thin film is oxidized. CONSTITUTION:After the base 1, on which a resistor 2 is formed, has been placed on a holder, the pressure of the inside of a furnace is reduced to several- tens mTorr. The several-tens mTorr atmosphere is maintained while oxygen gas is being introduced. An Al electrode 3 is formed on the base 1. As the furnace is brought in a low-pressure atmosphere, no convection is generated even in heating the base 1. Also, as the quantity of residual particles becomes small, the average free path becomes longer. As a result, oxygen molecules come flying from all directions, and the sections such as the upstream and the downstream of oxygen flow are eliminated. Consequently, the unevenness of oxidation caused by the quality of electrode material can be prevented.</p> |
