| 摘要 |
<p>PURPOSE:To provide the phase shift mask which exhibits an excellent phase shift effect to stress the contrast of pattern edges by the inversion of phases and the method for production thereof. CONSTITUTION:This mask has a light shielding region formed of a light shielding layer 4, a 1st transmission region A adjacent to the light shielding region and a 2nd transmission region B which is adjacent to the 1st transmission region A and has 180 deg. phase different of the transmitted light with the 1st transmission region A. The light shielding region and the 1st transmission region A are formed in the recessed part provided on a transparent substrate 1. The mask has otherwise the light shielding region formed of the light shielding layer 4, the 1st transmission region A adjacent to the light shielding region and the 2nd transmission region B which is adjacent to the 1st transmission region A and has 180 deg. phase difference of the transmitted light with the 1st transmission region A. The 2nd transmission region B is formed of a transparent shifter layer 13 provided on the transparent substrate 11 and further, an etching stop layer 12 is provided among the transparent substrate 11 and the transparent shifter layer 13 and the light shielding layer 4.</p> |
