| 摘要 |
<p>PURPOSE:To provide a photomask blank and photomask excellent in storage stability with which a high-accuracy fine pattern can be surely formed. CONSTITUTION:The photomask blank essentially consists of a glass substrate 1, intermediate layer 2 comprising a chromium oxide nitride film (Cr:O:N), light shielding layer 3 comprising a tungsten film containing carbon (W:C), coating layer 4 comprising a chromium oxide nitride film (Cr:O:N), and a thin film layer 5 comprising a tungsten film (W:C) containing carbon. By providing the intermediate layer 2 having affinity with both of the glass substrate 1 and the light shielding layer 3 between them, adhesion strength between them can be improved. Since the thin film layer 5 consists of a tungsten material having fast etching rate and the resist layer can be made thin, the working accuracy for the formation of resist patterns can be improved. Moreover, the thin film layer 5 acts as an etching mask during etching the coating layer 4, so that the accuracy of etching can be improved.</p> |
