| 摘要 |
<p>A CCD imager includes at least one four-phase vertical shift register having first, second, third and fourth transfer electrodes (G1 to G4). In order to prevent nonuniform distribution of smear charge and other unwanted charge, and for improving the quality of a picture, means are provided for making the potential well under each first electrode (G1) deeper than the potential wells under the second, third and fourth electrodes (G2 to G4). Preferably, a N-type semiconductor region (6) is formed under each first electrode (G1) by ion implantation. <IMAGE></p> |
