Heteroepitaxial growth of germanium on silicon by UHV/CVD.

摘要

A method of depositing Ge on a Si substrate in a reaction chamber includes the steps of: precleaning the substrate; evacuating the chamber to a pressure below 1,3310<-><7> Pa (10<-><9> Torr); heating the substrate to 300-375 degrees C; and providing a 10% GeH4, 90% He mixture of gas with a GeH4 partial pressure of 0,133-0,665 Pa (1-5 mTorr).