VAPOR PHASE EPITAXIAL GROWTH OF IRON-DOPED, INDIUM-BASED, COMPOUND GROUP III-V SEMICONDUCTORS,申请号EP19880300203-传众专利搜索

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发明名称	VAPOR PHASE EPITAXIAL GROWTH OF IRON-DOPED, INDIUM-BASED, COMPOUND GROUP III-V SEMICONDUCTORS
摘要
申请公布号	EP0276069(B1)	申请公布日期	1992.12.16
申请号	EP19880300203	申请日期	1988.01.12
申请人	AMERICAN TELEPHONE AND TELEGRAPH COMPANY	发明人	JOHNSTON, WILBUR DEXTER, JR.;LONG, JUDITH ANN;WILT, DANIEL PAUL
分类号	H01L33/00;B42D15/08;B65D27/10;C30B25/02;C30B29/40;H01L21/205;H01L33/30;H01S5/223;H01S5/227;H01S5/24	主分类号	H01L33/00
代理机构		代理人
主权项
地址

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