发明名称 |
Multilayered intermetallic connection for semiconductor devices |
摘要 |
A low copper concentration multilayered, device interconnect metallurgy, comprises an aluminum-copper (<2 weight percent copper) conductor having formed on one of its surfaces a layer of an intermetallic compound formed from a Group IVA metal and aluminum from the aluminum-copper conductor. The intermetallic compound is formed so as to contain only the single phase line compound of the intermetallic compound.
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申请公布号 |
US5171642(A) |
申请公布日期 |
1992.12.15 |
申请号 |
US19910638888 |
申请日期 |
1991.01.08 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DEHAVEN, PATRICK W.;MIS, J. DANIEL;RODBELL, KENNETH P.;TOTTA, PAUL A.;WHITE, JAMES F. |
分类号 |
H01L21/48;H01L23/498;H05K1/09;H05K3/16;H05K3/38 |
主分类号 |
H01L21/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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