Semiconductor device suitable for LSI - has 2nd metal wiring layer formed on metal film electrically connected to photoresist, selectively coated on 1st metal wiring above insulating layer

摘要

Semiconductor device has a semiconductor substrate (I) with an insulating upper main surface (IA); a 1st. metal wiring layer (II) on (IA); an intermediate insulating film (III), with a photoresist film (IIIA) at least on top, which is coated selectively on (II) and has a defined opening; a metal film (IV) at least in the opening and connected electrically with (II); and a 2nd. metal wiring layer (V) formed on (III) and (IV) and connected electrically with (IV). (IA) Is an oxide film. (IV) is produced by CVD. (III) consists of an insulating film esp. an oxide film, covered with (IIIA); or of (IIIA) only. (IIIA) is hardened film of a silicone ladder polymer of formula (IIIA-1), esp. a photopolymer. In (IIIA-1), R1-2 are phenyl, lower alkyl or photosensitive gps., pref. at least 3 mole-% being photopolymerisable unsatd. gps.; R3-6 are H, lower alkyl or photosensitive gps.; and n is 5-1000 (pref. 20-1000). USE/ADVANTAGE - The device is suitable for LSI. A tungsten film with very low electrical resistance can be formed in the contact hole only, since no tungsten is deposited on (III) under suitable CVD conditions, which saves etching. (V) adheres very well to the silicone ladder polymer film pref. used as (IIIA) and is extremely level. If (III) is a silicone ladder photopolymer, no other (IIIA) is needed, which simplifies prodn..