| 摘要 |
PURPOSE:To enable a static RAM where a bottom gate MOSTFT is made to serve a memory cell load to be lessened in an OFF-state current by lessening a channel polysilicon layer in thickness at a channel section and decreased in resistance by making the channel polysilicon layer other than the channel section thick. CONSTITUTION:A selective oxide film 6 is provided to the surface of the channel sections of a channel polysilicon layer 5 of a bottom gate type MOSTFT. The channel polysilicon layer 5 becomes thin at a channel section where the selective oxide film 6 is formed, so that the source and the drain of a TFT and a power supply wire can be lessened in resistance lessening the TFT in an OFF-state current. |
