| 摘要 |
PURPOSE:To improve the collection efficiency of a small number of carries, which are generated in a layer, which forms bulk and junction, and improve the conversion efficiency of a solar battery by seeking the improvement of the bulk life time by the temperature lowering in junction formation and the optimization of the impurity distribution inside the layer, which forms the junction, at the same time. CONSTITUTION:A thin p-type silicon deposition layer 4 is made first on a p-type silicon substrate 1, and then a thin n-type silicon deposited layer 5 is formed thereon to form p-n junction. The distribution of the impurities inside this n-type silicon deposited layer 5 is changed rectilinearly. By the improvement of the life time of the substrate and the improvement of the field effect inside the layer, the conversion efficiency of a solar battery can be improved 1% or mroe. |
