| 摘要 |
The diode gallium arsenide substrate has a thin gallium arsenide film on the side away from the metallised terminal contact surface. On the film is deposited a further layer forming a Schottky contact and plated with a second metallised terminal contact surface. The Schottky contact layer (7) is a monocrystal epitaxially grown. Pref. the monocrystal layer has a thickness of 10-100 Anxtrom. On the monocrystal layer is deposited a very thin cover film (8) of highly conductive gallium arsenide, carrying the second metallised terminal contact surface (2) of the Schottky diode. The grown, thin, monocrystalline gallium arsenide film (6) on the substrate (5) has a relatively slight electric conductivity. |
