| 摘要 |
PURPOSE:To form Al-Si layer on a substrate at a low cost by improving effective utilizing rate without developing unevenness in composition in the Al-Si layer. CONSTITUTION:An Al-made target 1 bored with plural holes 1a is fixed to a plate 4 through four supports 4a made of Al so as to have the same potential as the plate 4. Plural laying tables 3 made of Al are laid on plural projecting lines 4b on the plate 4 and positioned between the target 1 and the plate 4. On each mounting table 3, an Si-made sub-target 2 is laid so that each sub-target 2 has the same potential as the plate 4. While shifting each mounting table 3 toward the arrow mark A direction, Dc voltage is impressed to the plate 4. A part of sputtered particles of target 1 is flown toward the faced substrate (not shown in the figure) and stuck to the substrate. On the other hand, another part of the sputtered particles of sub-target 2 is flown toward the substrate after passing through each hole 1a in the target 1 and stuck to the substrate. The other sputtered particles are obstructed with the target 1 and do not reach the substrate. |
