发明名称 MANUFACTURE OF LIGHT-APPLIED VOLTAGE/FIELD SENSOR
摘要 <p>PURPOSE:To improve the yield of thin film elements by polishing a pair of faces of the mono-crystal of bismuth silicon oxide, covering transparent electrodes on a pair of faces, and cutting the mono-crystal into multiple elements with the blade of a slicer. CONSTITUTION:Faces 2, 2' of the mono-crystal 1 of bismuth silicon oxide or bismuth germanium oxide having a pair of faces 2, 2' arranged face to face are polished. Transparent electrodes are covered on the polished faces 2, 2', and the blade of a slicer is moved in the direction of an arrow A parallel with the faces 2, 2' from a plane 3 to cut the mono-crystal 1 into multiple thin elements 4. The elements 4 can be manufactured with a high yield.</p>
申请公布号 JPH04329374(A) 申请公布日期 1992.11.18
申请号 JP19910100657 申请日期 1991.05.02
申请人 SUMITOMO ELECTRIC IND LTD 发明人 NAMIKAWA YASUO
分类号 G01R15/24;G01R19/00;G02F1/03 主分类号 G01R15/24
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