| 摘要 |
PURPOSE:To obtain a semiconductor device which confines electrons in a region narrower than or equal to 400Angstrom , by forming aluminum films on vertical surfaces of a semiconductor device having the vertical surfaces. CONSTITUTION:Aluminum films are formed on vertical surfaces of a semiconductor device having the vertical surfaces. By an organic CVD method, aluminum is selectively deposited on the vertical surfaces of the semiconductor device having the vertical surfaces, thereby forming a semiconductor device. For example, on a semi-insulating GaAs substrate 1, an undoped GaAs layer 2 of 1mum in thickness is formed, on which an Al0.2Ga0.8As layer 3 of 100Angstrom in thickness is formed as a spacer layer. Further an Si-doped Al0.2Ga0.8As layer 4 of 1000Angstrom in thickness is formed, and finally an undoped GaAs layer 5 of 300Angstrom in thickness is formed as a cap layer. After each of the layers 2-5 is worked to be 0.5mum in width W, electrodes 7 are formed by a selective Al-CVD method, as shown by figure. |
