| 摘要 |
<p>PURPOSE:To prevent the electrification of the insulator substrate of a thin-film transistor(TFTR) array, etc., and the attraction of foreign matter in a production stage and to improve a yield by forming high-resistance conductive films between the insulator substrate and transistors. CONSTITUTION:A tin oxide film 2 is deposited on the glass substrate 1 which is an insulator and thereafter, the TFTRs are formed on the glass substrate 1. While the entire part of the substrate 1 is preferably coated with the high-resistance film in order to prevent the electrification of the substrate 1, the pickup of the dust on the parts where the TRs, etc., are not mounted at all is of no problem and, therefore, at least the parts to be mounted with the TRs, etc., of the substrate 1 are simply necessitated to be coated with the high-resistance films. The transparent films are obtainable if the conductive films produced of tin oxide or by mixing indium with the tin oxide, etc., are used as the high-resistance conductive films. The substrate transparent as a whole is obtd. if the insulator substrate is transparent and the high- resistance conductive films are transparent as well. Such substrate is effective for liquid crystal displays, image sensors, etc.</p> |
