Strip-form semiconductor ionising radiation detector - features central depletion region enclosed by upper and lower inversion and accumulation layers

摘要

The sensor comprises a block of n-type silicon (HK) enclosed by top and bottom insulating layers of silicone dioxide (IS) which is in turn covered by a number of metallic electrode strips (AL). The strips form a FET with source (S), gate (G) and drain (D) contacts and a common electrode (A). In operation, the strip potentials generate a central depletion region with inversion and accumulation layers between the depletion region and the areas of the oxide coating underlying the metallic contacts, ensuring that any conduction pairs generated by incident radiation are quickly swept away for conduction. USE/ADVANTAGE - Detector lay-out simplifies mfr. by reducing photolithographic requirement and number of doping steps.