METHOD FOR MEASURING THICKNESS OF SILYLATED RESIST LAYER

摘要

PURPOSE:To provide a method for measuring a thickness of a silylated resist layer for enabling a thickness of hte silylated resist layer to be measured easily before development. CONSTITUTION:A resist layer on a substrate is exposed by using a mask in a specific pattern, infrared rays are emitted to a resist layer with a silylated layer which is formed at an exposure region by silylutin to obtain absorption strength ratios of 874cm<-1> and 1594cm<-1> and then a thickness of the silylutin layer is measured by using a calibration curve of the absorption strength ratio and the thickness of the silylated layer which are produced previously.