| 摘要 |
<p>PURPOSE:To provide a data readout circuit having a large operational margin and a small electric consumption. CONSTITUTION:P type MOSFET MP15 as a reference voltage control means is connected between the output Vra1 of a reference voltage generating circuit RA1 and the power source Vc. The gate of the P type MOSFET MP15 is connected to the output Vsa1 of a sense circuit SA1. When a selected memory element is on a non-write state, the output Vsa1 of the sense circuit SA1 is on a low level, P type MOSFET MP15 turns to a continuity state, and the reference voltage Vra1 is changed to a high level. When the selected memory element is on a write state, the output Vsa1 of the sense circuit SA1 is on a high level, P type MOSFET MP15 turns to a non-continuity state, and the reference voltage Vra1 outputs a low level. Consequently, a comparison amplifier AMP1 outputs approximately the same voltage as the power source Vc or a grounded potential Vs, the operational margin is large, no through current is present, and the low power consumption is attained.</p> |
