发明名称 Device for secondary ion mass spectrometry using a field limitation method
摘要 This device comprises an optical system (1) bringing a primary ion beam (4), to irradiate a sample (7), into a chamber (2), a system (3, 11-13) forming the image of secondary ions emitted by the sample during its irradiation by the beam (4), an output slit (14) allowing the secondary ions emitted by a defined region of the sample to pass, an electrical sector (15) for separating, from the energy point of view, the secondary ions transmitted through the slit, and a beta slit (16) allowing the secondary ions with a predetermined energy to pass, means (31) displaying an image of the sample, the field of which is limited by the slit (14), and a magnetic sector (18) for analysing the secondary ions transmitted by the beta slit (16). <??>Application in particular to tests of sample semiconductor materials or of insulating materials. <IMAGE>
申请公布号 FR2675945(A1) 申请公布日期 1992.10.30
申请号 FR19920005015 申请日期 1992.04.23
申请人 HITACHI LTD;HITACHI INSTRUMENT ENGINEERING 发明人 IKEBE YOSHINORI;TAMURA HIFUMI;SUMIYA HIROYUKI;FURUKI AKEMI
分类号 H01J37/252;G01N23/225;G01Q30/02;G01Q60/44;H01J37/256;H01J49/14;H01J49/32 主分类号 H01J37/252
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