摘要 |
This device comprises an optical system (1) bringing a primary ion beam (4), to irradiate a sample (7), into a chamber (2), a system (3, 11-13) forming the image of secondary ions emitted by the sample during its irradiation by the beam (4), an output slit (14) allowing the secondary ions emitted by a defined region of the sample to pass, an electrical sector (15) for separating, from the energy point of view, the secondary ions transmitted through the slit, and a beta slit (16) allowing the secondary ions with a predetermined energy to pass, means (31) displaying an image of the sample, the field of which is limited by the slit (14), and a magnetic sector (18) for analysing the secondary ions transmitted by the beta slit (16).
<??>Application in particular to tests of sample semiconductor materials or of insulating materials.
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