| 摘要 |
<p>PURPOSE:To obtain a laminated type varistor on which a leakage current can be decreased without deterioration of varistor voltage and surge resistivity. CONSTITUTION:A laminated body 4 is formed by alternately stacking a semiconductor ceramic layer 2 and an inner electrode 3, and a laminated type varistor 1 is constituted in such a manner that non-linear voltage characteristics obtained on the interface between the aforesaid inner conductive film 3 and the semiconductor ceramic layer 2. In this case, an oxide of element, which is selected from at least one or more kinds of Co and rare-earth element, and an Mn oxide are added to the above-mentioned inner electrode 3. Also, the adding quantity of the aforesaid Co or rare-earth element should be 0.01 to 20wt.% in terms of Co2O3, or R2O3, (R indicates rare-earth element), and the adding quantity of Mn should be 0.01 to 20wt.% in termas of Mn3O4.</p> |
