METHOD OF DRY ETCHING INA1AS AND INGAAS LATTICE MATCHED TO INP,申请号EP19920103750-传众专利搜索

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发明名称	METHOD OF DRY ETCHING INA1AS AND INGAAS LATTICE MATCHED TO INP
摘要
申请公布号	EP0503473(A3)	申请公布日期	1992.10.28
申请号	EP19920103750	申请日期	1992.03.05
申请人	TEXAS INSTRUMENTS INCORPORATED	发明人	HENDERSON, TIMOTHY S.;PLUMTON, DONALD L.
分类号	H01L21/302;H01L21/306;H01L21/3065;H01L27/12;(IPC1-7):H01L21/306	主分类号	H01L21/302
代理机构		代理人
主权项
地址

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