METHOD FOR LOCALLY TREATING PROJECTION ON SEMICONDUCTOR SUBSTRATE ESPECIALLY BY LITHOGRAPHY

摘要

PURPOSE: To form a window having accurately arranged edges by the edges of protrusion for formation of the window. CONSTITUTION: Protrusions on a semiconductor substrate are lacally treated particularly by lithography. The method includes steps of depositing a protective resin 108 outside a protrusion zone 106 to be treated, and applying such a treating means so as to protect by this resin for this resin and zone. Before applying the treating means, the protective resin is fluidized to move toward the protrusion zone, so as to at least increase the thickness immediately near this zone.