| 摘要 |
PURPOSE:To obtain a negative image of high precision and superior quality, by irradiating a quinonediazide type positive resist film with far ultraviolet rays to effect patternwise exposure, then heat treating this, and further uniformly irradiating it with ultraviolet rays to solubilize the areas not developed with the far ultraviolet rays in a developing fluid. CONSTITUTION:A quinonediazide type positive resist film coated on a substrate is irradiated with far ultraviolet rays of 180-300nm wavelengths in >=200mJ/cm<2> intensity to effect patternwise exposure, and then, heat treated at 80-100 deg.C for 15-20min to insolubilize the exposed areas in a developing fluid. This resist film is uniformly irradiated with ultraviolet rays of >=350nm wavelengths in 30- 50mJ/cm<2> intensity to solubilize the areas not developed with the far ultraviolet rays in the developing fluid, and developed by dissolving said areas in an alkaline developing fluid or a metal-free developing fluid to give the desired negative pattern image, thus permitting a high quality, shallow-etched negative image of low diffraction and high precision to be obtained. |
