| 摘要 |
A method of fabricating a photomask pattern (210), having a matrix array of unit patterns (201) on a photomask (200), involves two exposure modes. In a first exposure mode selected matrix locations (211 to 214) are exposed to an optical image for forming a unit pattern. In a second exposure mode the other matrix locations are exposed to the optical image in a regular ordered sequence by step-and-repeat printing (D, E, F, G, H). Each unit pattern has a vernier pattern. Vernier patterns of adjacent unit patterns overlap (230) to provide for measurement of shear. The employment of the two exposure modes allows accumulated printing shear to be measured from overlapping verniers patterns provided at locations (e, f, g, h) where unit patterns formed in the first and second modes respectively are adjacent. |
