发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To enable a power supply pin of a semiconductor integrated circuit to be enhanced in dielecytric breakdown strength. CONSTITUTION:In a semiconductor integrated circuit, provided with an inner voltage dropping circuit, an electrostatic protective circuit including parasitic MOSFETs 61 and 62 is provided between power supply pads 21 and 22 (Vsc pad and Vss pad) or the power supply pads and an input-output pad. Charge applied to a power supply pin can be conducted to other pins through the electrostatic protective circuit, whereby the power supply pin can be enhanced in dielectric breakdown strength.
申请公布号 JPH04296051(A) 申请公布日期 1992.10.20
申请号 JP19910061482 申请日期 1991.03.26
申请人 HITACHI LTD;HITACHI VLSI ENG CORP 发明人 SUZUKI YUKIE;KOYAMA YOSHIHISA
分类号 H01L27/04;H01L21/822;H01L21/8238;H01L21/8242;H01L27/092;H01L27/10;H01L27/108 主分类号 H01L27/04
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