发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT |
摘要 |
PURPOSE:To enable a power supply pin of a semiconductor integrated circuit to be enhanced in dielecytric breakdown strength. CONSTITUTION:In a semiconductor integrated circuit, provided with an inner voltage dropping circuit, an electrostatic protective circuit including parasitic MOSFETs 61 and 62 is provided between power supply pads 21 and 22 (Vsc pad and Vss pad) or the power supply pads and an input-output pad. Charge applied to a power supply pin can be conducted to other pins through the electrostatic protective circuit, whereby the power supply pin can be enhanced in dielectric breakdown strength. |
申请公布号 |
JPH04296051(A) |
申请公布日期 |
1992.10.20 |
申请号 |
JP19910061482 |
申请日期 |
1991.03.26 |
申请人 |
HITACHI LTD;HITACHI VLSI ENG CORP |
发明人 |
SUZUKI YUKIE;KOYAMA YOSHIHISA |
分类号 |
H01L27/04;H01L21/822;H01L21/8238;H01L21/8242;H01L27/092;H01L27/10;H01L27/108 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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