| 摘要 |
PURPOSE: To provide a laser diode/waveguide monolithic integrated device on a semi-insulating substrate. CONSTITUTION: A laser diode provided with a waveguide layer 3, a middle layer 4, an active layer 5, and a lattice layer 6 is arranged between the parts of a lower clad layer 10 at an active region A on a semi-insulating substrate 1, an upper clad layer 7, a center contact layer 8, and a central electrode 9 are provided at the upper part of the laser stripe, and the active layer 5 is controlled via the lower clad layer 10 and a contact layer 11 and an electrode 12 on a side surface that is covered on the layer 10. |
