| 摘要 |
PURPOSE:To eliminate a need for a dry etching operation which is used to obtain a flat-structure Cu interconnection inside a groove and whose control is difficult by a method wherein a first electrode material is left only on the bottom face of the groove and a second electrode material is piled up on the first electrode material in the groove. CONSTITUTION:An open groove 16 for interconnection use is formed in a CVD- SiO2 film 14 in such a way that its cross section is a rectangular shape having vertical stepped parts. Then, overhang parts 17 are formed between it and a photoresist 15. A Ti film 18 and a Pt film 19 are applied continuously by an electron-beam vapor-deposition operation. Then, the photoresist 15 remaining on the CVD-SiO2 film 14 is dissolved a Pt/Ti interconnection 20 is formed only on the bottom part inside the open groove 16 for interconnection use. Then, only the Pt/Ti interconnection 20 is plated selectively with Cu in an electroless manner. Then, the open groove 16 for interconnection use in the CVD-SiO2 film 14 is filled with a Cu selectively grown layer 21. Thereby, a Cu/Pt/Ti laminated electrode is formed inside the groove 16 for interconnection use.
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