ELECTRODE STRUCTURE OF MOS FIELD-EFFECT TRANSISTOR,申请号JP19910073923-传众专利搜索

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发明名称	ELECTRODE STRUCTURE OF MOS FIELD-EFFECT TRANSISTOR
摘要
申请公布号	JPH04284670(A)	申请公布日期	1992.10.09
申请号	JP19910073923	申请日期	1991.03.13
申请人	TOSHIBA CORP	发明人	ENDO KAZUO
分类号	H01L29/43;H01L29/423;H01L29/49;H01L29/78	主分类号	H01L29/43
代理机构		代理人
主权项
地址

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